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HRLP43N06H Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Enhanced Avalanche Ruggedness | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 á³
1.0
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 20 A
--
VGS = 4.5 V, ID = 20 A
--
gFS Forward Transconductance
VDS = 5, ID = 20 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
60
VDS = 60 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, TJ = 100à
--
IGSS Gate-Body Leakage Current
VGS = Ï20 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 30 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
--
VDS = 30 V, ID = 20 A,
--
RG = 10 Â
--
--
Qg (10V)
Qg (4.5V)
Qgs
Qgd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
VDS = 30 V, ID = 20 A,
--
VGS = 10 V
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 20 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 300 A/ÈV
--
--
3.0
V
3.6 4.3 mÂ
4.6 6.0 mÂ
42
--
S
--
--
V
--
1
á³
-- 100 á³
-- Ï100 á²
3250 --
á
1200 --
á
50
--
á
1.6
--
Â
12
--
á¨
10
--
á¨
55
--
á¨
15
--
á¨
49
--
nC
24
--
nC
8
--
nC
9
--
nC
-- 140
A
-- 410
0.9 1.2
V
50
--
á¨
120 --
nC
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