 English |
|
|
|
|
|
|
|
| HFT1N60F_16 Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
| |||
| ◁ |
Electrical Characteristics TJ=25à
unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
VGS
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 È$
VGS = 10 V, ID = 0.5 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS = 0 V, ID = 250 È$
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125à
VGS = Ï30 V, VDS = 0 V
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V, ID = 1 A,
RG = 25 Â
(Note 4,5)
VDS = 480 V, ID = 1 A,
VGS = 10 V
(Note 4,5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1 A
diF/dt = 100 A/ÈV
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=59mH, IAS=1A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDÂ$GLGWÂ$ÈV9DDÂ%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
5. Essentially Independent of Operating Temperature
Min Typ Max Unit
2.0
--
4.0
V
--
6.5
8
Â
600
--
--
V
--
--
10
È$
--
--
100
È$
--
-- Ï100 nA
--
160
--
pF
--
26
--
pF
--
6.5
--
pF
--
13
--
ns
--
17
--
ns
--
19
--
ns
--
22
--
ns
--
3.7
--
nC
--
0.9
--
nC
--
1.3
--
nC
--
--
1
A
--
--
4
--
--
1.3
V
--
181
--
ns
--
0.5
--
È&
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÎÎΥΠÎÎΣÍͣͧ͢͡Í
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese