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HFS5N60S Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ã
2.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.25 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ã
600
ÎBVDSS Breakdown Voltage Temperature
/ÎTJ Coefficient
ID = 250 ã, Referenced to25â
--
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V
--
VDS = 480 V, TC = 125â
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 4.5 A,
--
RG = 25 â¦
--
--
(Note 4,5)
--
VDS = 480V, ID = 4.5 A,
--
VGS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V
--
diF/dt = 100 A/μs (Note 4)
--
Typ Max Units
--
4.5
V
2.0 2.5
â¦
--
--
V
0.6
-- V/â
--
1
ã
--
10
ã
-- 100 ã
-- -100 ã
520 680 ã
60
80
ã
8.0 10.5 ã
11
33
ã±
45
90
ã±
40
88
ã±
48 100 ã±
10.5 13.5 nC
2.5
--
nC
4.0
--
nC
-- 4.5
A
--
18
--
1.4
V
300 --
ã±
2.2
--
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=18.9mH, IAS=4.5A, VDD=50V, RG=25â¦, Starting TJ =25°C
3. ISDâ¤4.5A, di/dtâ¤200A/μs, VDDâ¤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ⤠300μs, Duty Cycle ⤠2%
5. Essentially Independent of Operating Temperature
â SEMIHOW REV.A0,Aug 2007
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