HFS4N65FS Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Electrical Characteristics T_J=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
V_DS = V_GS, I_D = 250 Ꮃ
2.0
Static Drain-Source
R_{DS(ON) On-Resistance}
V_GS = 10 V, I_D = 2 A
--
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 Ꮃ
650
I_DSS Zero Gate Voltage Drain Current ^{VDS = 650 V, VGS = 0 V}
--
V_DS = 520 V, T_C = 125୅
--
I_GSS Gate-Body Leakage Current
V_GS = ρ30 V, V_DS = 0 V
--
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS = 325 V, I_D = 4 A,
--
R_G = 25 Ÿ
--
--
(Note 4,5)
--
V_DS = 520 V, I_D = 4 A,
--
V_GS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 4 A, V_GS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 4 A, V_GS = 0 V
--
di_F/dt = 100 A/ȝV (Note 4)
--
--
4.0
V
3.0 3.8
Ÿ
--
--
V
--
10
Ꮃ
-- 100 Ꮃ
-- ρ100 Ꮂ
380 500 Ꮔ
45
60
Ꮔ
6.5 8.5 Ꮔ
19
48
Ꭸ
19
48
Ꭸ
35
80
Ꭸ
22
54
Ꭸ
8.5 11 nC
2.1
--
nC
2.8
--
nC
--
4
A
--
16
--
1.4
V
240 --
Ꭸ
1.4
--
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, I_AS=4A, V_DD=50V, R_G=25:, Starting T_J =25qC
3. I_SD”$, di/dt”$ȝV, V_DD”%9_DSS , Starting T_J =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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