HFS2N60U Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Package Marking and Odering Information
Device Marking
HFS2N60U
HFS2N60US
HFS2N60U
HFS2N60US
Week Marking
YWWX
YWWX
YWWXg
YWWXg
Package
TO-220F(A)
TO-220F(B)
TO-220F(A)
TO-220F(B)
Packing
Tube
Tube
Tube
Tube
Quantity
50
50
50
50
RoHS Status
Pb Free
Pb Free
Halogen Free
Halogen Free
୔ TO-220F(A) : Dual Gauge, TO-220F(B) : Single Gauge
Electrical Characteristics T_C=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS
R_DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V_DS = V_GS, I_D = 250 Ꮃ
V_GS = 10 V, I_D = 1.0 A
2.5
-- 4.5
V
--
4.0 5.0
Ÿ
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 Ꮃ
600
ǻBV_DSS Breakdown Voltage Temperature
/ǻT_J Coefficient
I_D = 250 Ꮃ, Referenced to 25୅
--
I_DSS
Zero Gate Voltage Drain Current ^{VDS = 600 V, VGS = 0 V}
V_DS = 480 V, T_C = 125୅
--
--
I_GSS Gate-Body Leakage Current
V_GS = ρ30 V, V_DS = 0 V
--
Dynamic Characteristics
--
--
V
0.6
--
V/୅
--
1
Ꮃ
--
10
Ꮃ
-- ρ100 Ꮂ
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
Switching Characteristics
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
--
320 420 Ꮔ
--
38
50
Ꮔ
--
6.5 8.5 Ꮔ
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS = 300 V, I_D = 2.0 A,
--
R_G = 25 Ÿ
--
--
(Note 4,5) _--
V_DS = 480 V, I_D = 2.0 A,
--
V_GS = 10 V
--
(Note 4,5) _--
Source-Drain Diode Maximum Ratings and Characteristics
20
50
Ꭸ
20
50
Ꭸ
30
70
Ꭸ
20
50
Ꭸ
5.5 7.5 nC
1.8
--
nC
3.5
--
nC
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
--
-- 2.0
A
--
-- 8.0
V_SD Source-Drain Diode Forward Voltage I_S = 2.0 A, V_GS = 0 V
--
--
1.4
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 2.0 A, V_GS = 0 V
-- 206 --
Ꭸ
di_F/dt = 100 A/ȝV (Note 4) --
0.76
--
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=53mH, I_AS=2A, V_DD=50V, R_G=25:, Starting T_J =25qC
3. I_SD”$di/dt”$ȝV, V_DD”%9_DSS , Starting T_J =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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