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HFS12N60U Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology
Package Marking and Odering Information
Device Marking
HFS12N60U
HFS12N60U
Week Marking
YWWX
YWWXg
Package
TO-220F
TO-220F
Packing
Tube
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 6 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ
600
IDSS
Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125୅
--
--
IGSS Gate-Body Leakage Current
VGS = ρ30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 12 A,
--
RG = 25 Ÿ
--
--
(Note 4,5) --
VDS = 480V, ID = 12 A,
--
VGS = 10 V
--
(Note 4,5) --
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 12 A, VGS = 0 V
--
diF/dt = 100 A/ȝV (Note 4) --
Typ Max Units
--
4.5
V
0.53 0.65 Ÿ
--
--
V
--
1
Ꮃ
--
10
Ꮃ
-- ρ100 Ꮂ
2100 2750 Ꮔ
170 220 Ꮔ
11 14.5 Ꮔ
55 120 Ꭸ
45 100 Ꭸ
145 300 Ꭸ
25
60
Ꭸ
42 55 nC
12
--
nC
12
--
nC
--
12
A
--
48
--
1.4
V
430 --
Ꭸ
4.0
--
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=10.7mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”12A, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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