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| HFP50N06A Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 60V N-Channel MOSFET | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 á³
2.0
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 25 A
--
gFS Forward Transconductance
VDS = 25 V, ID = 25 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
60
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TJ = 125à
--
--
IGSS Gate-Body Leakage Current
VGS = Ï25 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
--
VDS = 30 V, ID = 25 A,
--
RG = 25 Â
--
tf
Turn-Off Fall Time
--
Qg Total Gate Charge
VDS = 48 V, ID = 50 A
--
Qgs Gate-Source Charge
VGS = 10 V
--
Qgd Gate-Drain Charge
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 50 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ÈV
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=230ÈH, IAS=50A, VDD=25V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
4. Essentially Independent of Operating Temperature
--
4.0
V
18
22
mÂ
22
--
S
--
--
V
--
1
á³
--
10
á³
-- Ï100 á²
1290 1675 á
445 580 á
84 110 á
15
40
á¨
105 220 á¨
80 180 á¨
85 180 á¨
27 34 nC
5.0
--
nC
10.2 --
nC
--
50
A
-- 200
--
1.5
V
45
--
á¨
70
--
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