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HFP13N50S_14 Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 6.5 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ᒺ
500
ǻBVDSS Breakdown Voltage Temperature
/ǻTJ Coefficient
ID = 250 ᒺ, Referenced to 25୅
--
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V
--
VDS = 400 V, TC = 125୅
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 13 A,
--
RG = 25 Ÿ
--
--
(Note 4,5)
--
VDS = 400V, ID = 13 A,
--
VGS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 13 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 13 A, VGS = 0 V
--
diF/dt = 100 A/ȝV (Note 4)
--
Typ Max Units
--
4.0
V
0.39 0.48 Ÿ
--
--
V
0.5
--
V/୅
--
1
ᒺ
--
10
ᒺ
-- 100 ᒹ
-- -100 ᒹ
1550 2000 ᓂ
205 265 ᓂ
23
30
ᓂ
25
60
ᓩ
100 210 ᓩ
130 270 ᓩ
100 210 ᓩ
38 50 nC
6.0
--
nC
16.5 --
nC
--
13
A
--
52
--
1.4
V
410 --
ᓩ
4.5
--
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=6mH, IAS=13A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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