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| HCU70R1K5E Datasheet, PDF (2/9 Pages) SemiHow Co.,Ltd. – Excellent stability and uniformity | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 á³
2.5
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 2 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
700
VDS = 700 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 560 V, TJ = 125à
--
IGSS Gate-Body Leakage Current
VGS = Ï30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 50 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
--
VDS = 350 V, ID = 4 A,
--
RG = 25 Â
--
tf
Turn-Off Fall Time
--
Qg Total Gate Charge
VDS = 560 V, ID = 4 A
--
Qgs Gate-Source Charge
VGS = 10 V
--
Qgd Gate-Drain Charge
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 4 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 4 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ÈV
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
--
4.5
V
1.3 1.5
Â
--
--
V
--
10
á³
-- 100 á³
-- Ï100 á²
290 380 á
25
33
á
5
6.5
á
35
80
á¨
20
50
á¨
50 110 á¨
20
50
á¨
5.5 7.5 nC
2.0
--
nC
1.5
--
nC
--
4
A
--
12
--
1.3
V
180 --
á¨
0.9
--
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