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| HCS80R650E Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 800V N-Channel Super Junction MOSFET | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 4 A
2.5
-- 4.5
V
-- 0.55 0.65 Â
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
800
VDS = 800 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 640 V, TJ = 125à
--
IGSS Gate-Body Leakage Current
VGS = Ï30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 50 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
--
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
VDS = 400 V, ID = 8 A,
--
RG = 25 Â
--
tf
Turn-Off Fall Time
--
Qg Total Gate Charge
--
Qgs Gate-Source Charge
VDS = 640 V, ID = 8 A
VGS = 10 V
--
Qgd Gate-Drain Charge
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 8 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 4 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ÈV
--
--
--
V
--
1
á³
-- 100 á³
-- Ï100 á²
750 --
á
52
--
á
6
--
á
32
--
á¨
24
--
á¨
44
--
á¨
20
--
á¨
12 16 nC
4.2
--
nC
3.2
--
nC
--
8
A
--
24
--
1.3
V
194 --
á¨
1.7
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍͲΦÎΦΤΥÍͣͧ͢͡Í
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