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| HCS65R180S Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 10 A
2.8
-- 4.2
V
-- 0.15 0.18 Â
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 650 V, VGS = 0 V
VDS = 520 V, TJ = 125à
VGS = Ï20 V, VDS = 0 V
650 --
--
V
--
--
10
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850 --
á
-- 500 --
á
--
9
--
á
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
0.54 --
Â
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 20 A,
RG = 25 Â
VDS = 520 V, ID = 20 A
VGS = 10 V
--
45
--
á¨
--
40
--
á¨
-- 140 --
á¨
--
25
--
á¨
--
46
--
nC
--
12
--
nC
--
16
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 10 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
--
20
A
--
--
60
--
--
1.2
V
-- 330 --
á¨
--
3.8
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡Í;ÎΣÎÎÍͣͦ͢͡Í
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