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| HCS60R750V Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 4.4 A
2.5
-- 3.5
V
-- 0.67 0.75 Â
gFS Forward Transconductance
Off Characteristics
VDS = 10, ID = 4.4 A
--
5
--
S
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125à
VGS = Ï20 V, VDS = 0 V
600 --
--
V
--
--
10
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
710 920 á
--
200 260 á
--
3.5 4.6 á
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
0.5
--
Â
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7 A,
RG = 25 Â
VDS = 480 V, ID = 7 A
VGS = 10 V
--
20
50
á¨
--
25
60
á¨
--
60 130 á¨
--
25
60
á¨
--
14 18.5 nC
--
4
--
nC
--
5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
--
7
A
--
--
21
--
--
1.2
V
-- 300 --
á¨
--
2.4
--
È&
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍͿΠΧÎÎÎÎΣÍͣͥ͢͡Í
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