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| HCP70R600S Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 3.5 A
2.8
-- 4.2
V
-- 0.54 0.6
Â
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
700
IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V
--
VDS = 560 V, TJ = 125à
--
IGSS Gate-Body Leakage Current
VGS = Ï20 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 350 V, ID = 7.3 A,
--
RG = 25 Â
--
--
--
VDS = 560 V, ID = 7.3 A,
--
VGS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 7.3 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 3.5 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ÈV
--
--
--
V
--
10
á³
-- 100 á³
-- Ï100 á²
500 --
á
250 --
á
7
--
á
4
--
Â
20
--
á¨
20
--
á¨
60
--
á¨
20
--
á¨
16
--
nC
4.0
--
nC
5.5
--
nC
-- 7.3
A
--
22
--
1.3
V
250 --
á¨
2
--
uC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͢ÍÍͿΠΧÎÎÎÎΣÍÍͣͥ͢͡Í
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