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HCD6N70S Datasheet, PDF (2/10 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 1.5 A
2.5
-- 4.5
V
-- 1.05 1.25 Â
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
700
IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V
--
VDS = 560 V, TJ = 125à
--
IGSS Gate-Body Leakage Current
VGS = Ï20 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 100 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 350 V, ID = 1.5 A,
RG = 10 Â
--
--
(Note 4,5) --
VDS = 560 V, ID = 1.5 A
--
VGS = 10 V
--
(Note 4,5) --
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 1.5 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.5 A, VGS = 0 V
--
diF/dt = 100 A/ÈV (Note 4) --
--
--
V
--
10
á³
-- 100 á³
-- Ï100 á²
300 390 á
20
26
á
5
6.5
á
6.5
--
Â
15
40
á¨
20
50
á¨
50 110 á¨
25
60
á¨
7.0 9.0 nC
1.5
--
nC
2.0
--
nC
--
3
A
--
8
--
1.2
V
120 --
á¨
1
--
uC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=1A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDÂ$di/dtÂ$ÈV, VDDÂ%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
5. Essentially Independent of Operating Temperature
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