 English |
|
|
|
|
|
|
|
| HCA65R042E Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Excellent stability and uniformity | |||
| |||
| ◁ |
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 2 mA
VGS = 10 V, ID = 39 A
2.5
-- 4.5
V
--
38
42
mÂ
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 1 mA
VDS = 650 V, VGS = 0 V
VDS = 520 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
650 --
--
V
--
--
1
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
-- 7200 --
á
-- 410 --
á
--
12
--
á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 39 A,
RG = 25 Â
VDS = 520 V, ID = 39 A
VGS = 10 V
-- 130 --
á¨
--
35
--
á¨
-- 250 --
á¨
--
20
--
á¨
-- 100 130 nC
--
36
--
nC
--
18
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 39 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 39 A, VGS = 0 V
diF/dt = 100 A/ÈV
--
--
78
A
--
-- 234
--
--
1.4
V
-- 556 --
á¨
-- 10.8 --
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=50mH, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍͲΡΣÎÎÍͣͧ͢͡Í
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese