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| HCA60R095T Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel Super Junction MOSFET | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 á³
VGS = 10 V, ID = 20 A
2.0
-- 4.0
V
--
80
95
mÂ
gFS Forward Transconductance
VDS = 10 V, ID = 20 A
--
28
--
S
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 á³
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125à
VGS = Ï30 V, VDS = 0 V
600 --
--
V
--
--
1
á³
--
-- 100 á³
--
-- Ï100 á²
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
-- 5740 --
á
-- 372 --
á
--
6.8
--
á
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 40 A,
RG = 25 Â
VDS = 480 V, ID = 40 A
VGS = 10 V
--
70
--
á¨
--
140
--
á¨
-- 240 --
á¨
--
31
--
á¨
--
109 --
nC
--
28
--
nC
--
40
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 40 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 40 A, VDD = 480 V
diF/dt = 100 A/ÈV
--
--
40
A
--
-- 120
--
--
1.2
V
-- 528 --
á¨
--
7.2
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
à°ÍÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͡ÍÍͻΦÎÎÍͣͧ͢͡Í
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