MCK22-8 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Sensitive Gate Silicon Controlled Rectifiers

MCK22-8
Silicon Controlled Rectifier
FEATURES
 Repetitive Peak Off-State Voltage: 600V
 R.M.S On–State Current (I_T(RMS) = 2A)
 Low Gate Trigger Current: ≤ 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit.
General Description
Semihow’s SCR product is a single directional PNPN device, has a
low gate trigger current and high stability in gate trigger current to
temperature, generally suitable for sensing and detection circuits.
V_DRM = 600 V
I_T(RMS) = 2 A
I_TSM = 20A
I_GT = 200uA
Symbol
SOT-89
A
K
G
Absolute Maximum Ratings (T_J=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
Ratings
Unit
V_DRM Repetitive Peak Off-State Voltage _{Sine wave, 50/60Hz, Gate open}
600
V
V_RRM Repetitive Peak Reverse Voltage
600
V
I_T(RMS) R.M.S. On-State Current
Full sine wave, T_C = 75^oC
2
A
I_TSM Surge On-State Current
½ cycle, 60Hz, Sine wave,
Non repetitive
20
A
I²t Fusing Current
t = 10ms
2
A²S
P_GM
Forward Peak Gate Power
Dissipation
T_J = 110 °C, pulse width ≤ 1.0us
0.5
W
P_G(AV)
Forward Average Gate Power
Dissipation
T_J = 110 °C, t = 8.3ms
0.1
W
I_FGM Forward Peak Gate Current
T_J = 110 °C, pulse width ≤ 1.0us
0.2
A
V_RGM Reverse Peak Gate Voltage
T_J = 110 °C, pulse width ≤ 1.0us
5
V
T_J Operating Junction Temperature
-40~+110
o_C
T_STG Storage Temperature
-40~+150
o_C
◎ SEMIHOW REV.A0,Feb 2016