MCK100-6 Datasheet, PDF (1/5 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCK100-6
Silicon Controlled Rectifier
FEATURES
 Repetitive Peak Off-State Voltage: 400V
 R.M.S On–State Current (I_T(RMS) = 0.8A)
 Low Gate Trigger Current: 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit.
General Description
Semihow’s SCR product is a single directional PNPN device, has a
low gate trigger current and high stability in gate trigger current to
temperature, generally suitable for sensing and detection circuits.
V_DRM = 400 V
I_T(RMS) = 0.8 A
I_TSM = 11 A
I_GT = 200uA
Symbol
SOT-89
A
K
G
Absolute Maximum Ratings (T_J=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
V_DRM
V_RRM
I_T(AV)
I_T(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
I_TSM Surge On-State Current
I²t Fusing Current
P_GM
Forward Peak Gate Power
Dissipation
Sine wave, 50/60Hz, Gate open
Full sine wave, T_C = 95.1^oC
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
t = 10ms
T_J = 125 °C, pulse width ≤ 1.0us
P_G(AV)
Forward Average Gate Power
Dissipation
I_FGM
V_RGM
T_J
T_STG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T_J = 125 °C, t = 8.3ms
T_J = 125 °C, pulse width ≤ 1.0us
T_J = 125 °C, pulse width ≤ 1.0us
Ratings
Unit
400
V
400
V
0.5
A
0.8
A
10/11
A
0.5
A²S
2
W
0.1
W
1
A
5
V
-40~+125
o_C
-40~+150
o_C
◎ SEMIHOW REV.A0,March 2012