HTH40A80BW Datasheet, PDF (1/4 Pages) SemiHow Co.,Ltd. – Repetitive Peak Off-State Voltage

HTH40A80BW
3 Quadrants TRIAC
FEATURES
 Repetitive Peak Off-State Voltage : 800V
 R.M.S On–State Current (I_T(RMS) = 40A)
 Gate Trigger Current : 50mA
General Description
HTH40A80BW triacs, with high ability to withstand the shock
loading of large current, provide high dv/dt rate with strong
resistance to electromagnetic interface. With high commutation
performances, 3 quadrants products especially recommended for
use on inductive load. Provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink complying with UL
standards (File ref: E252906).
V_DRM = 800 V
I_T(RMS) = 40 A
I_TSM = 420 A
I_GT(max) = 50mA
Symbol
TO-3P Insulated
T1 _{T2 G}
Absolute Maximum Ratings (T_J=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
V_DRM
V_RRM
V_DSM
V_RSM
I_T(AV)
I_T(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-State Voltage
Non Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
Sine wave, 50/60Hz, Gate open
T_J = 25 °C, tp = 10ms
Full sine wave, T_C = 80^oC
I_TSM Surge On-State Current
Full cycle, 50Hz,
Sine wave, Non repetitive
I²t
dI/dt
I_GM
P_GM
P_G(AV)
T_J
T_STG
Fusing Current
Critical Rate of Rise of On-State
Current
Peak Gate Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
t = 10ms
I_G = 2 x I_GT , tr ≤ 100ns,
f = 120Hz, T_J = 125 °C
T_J = 125 °C, tp = 20us
T_J = 125 °C, tp = 20us
T_J = 125 °C
Ratings
Unit
800
V
800
V
V_DRM+100
V
V_RRM+100
V
36
A
40
A
400
A
880
A²S
50
A/us
4
A
10
W
1
W
-40~+125
o_C
-40~+150
o_C
◎ SEMIHOW REV.A0,Jan 2016