HTB1A60 Datasheet, PDF (1/6 Pages) SemiHow Co.,Ltd. – 4 Quadrants Sensitive TRIAC

HTB1A60/HTB1A80
4 Quadrants Sensitive TRIAC
FEATURES
 Repetitive Peak Off-State Voltage : 600V/800V
 R.M.S On–State Current (I_T(RMS) = 1A)
 Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
V_DRM = 600V/800V
I_T(RMS) = 1 A
I_TSM = 13 A
I_GT = 5mA/12mA
Symbol
TO-92
Applications
AC power or phase control through low output current of MCU or IC
suck like Heater, Solenoid valve control, etc.
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
T1
G
T2
Absolute Maximum Ratings (T_J=25℃ unless otherwise specified )
Symbol
Parameter
Conditions
Ratings
HTB1A60 HTB1A80
Unit
V_DRM Repetitive Peak Off-State Voltage _{Sine wave, 50/60Hz, Gate open}
600
V_RRM Repetitive Peak Reverse Voltage
600
800
V
800
V
I_T(AV) Average On-State Current
I_T(RMS) R.M.S. On-State Current
Full sine wave, T_C = 72^oC
0.9
A
1
A
I_TSM Surge On-State Current
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
12/13
A
I²t Fusing Current
t = 10ms
0.7
A²S
P_GM
Forward Peak Gate Power
Dissipation
T_J = 125 °C
2
W
P_G(AV)
Forward Average Gate Power
Dissipation
I_FGM
V_RGM
T_J
T_STG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T_J = 125 °C, over any 20ms
T_J = 125 °C, pulse width ≤ 20us
T_J = 125 °C, pulse width ≤ 20us
0.2
W
0.5
A
6
V
-40~+125
o_C
-40~+150
o_C
◎ SEMIHOW REV.A1,March 2013