HSC106M Datasheet, PDF (1/4 Pages) SemiHow Co.,Ltd. – Silicon Controlled Rectifier

HSC106D/M
Silicon Controlled Rectifier
FEATURES
 Repetitive Peak Off-State Voltage (V_DRM=400V/600V)
 R.M.S On-State Current (I_T(RMS)=4.0A)
 Average On-State Current (I_T(AV)=2.55A)
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light and speed control, process
and remote control, and warning systems where reliability of
operation is important.
Dec 2014
V_DRM =
400V / 600 V
I_T(RMS) = 4.0A
Symbol ^2.Anode
1.Cathode
3.Gate
TO-126
1. K
2. A
3. G
1
2
3
HSC106D/M
Absolute Maximum Ratings ^(Ta^=25℃)
Symbol
Parameter
V_DRM
Repetitive Peak Off-State Voltage (Forward) HSC106D
HSC106M
V_RRM
Repetitive Peak Off-State Voltage (Reverse) HSC106D
HSC106M
I_T(RMS)
I_T(AV)
I_TSM
P_GM
R.M.S On-State Current (All conduction angles)
Average On-State Current
Surge On-State Current
(1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, T_j=110℃)
Forward Peak Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
P_G(AV)
Forward Average Gate Power Dissipation
(Pulse Width ≤1.0μsec, Tc=80℃)
V_RGM
I_FGM
T_STG
T_j
Reverse Peak Gate Voltage
Forward Peak Gate Current
(Pulse Width ≤1.0μsec, Tc=80℃)
Storage Temperature Range
Operating Junction Temperature
Value
400
600
400
600
4.0
2.55
20
0.5
0.1
6.0
0.2
-40 to +150
-40 to +110
Units
V
V
A
A
A
W
W
V
A
℃
℃
◎ SEMIHOW REV.A0, December 2014