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| HSC106DM Datasheet, PDF (1/4 Pages) SemiHow Co.,Ltd. – Sensitive Gate Silicon Controlled Rectifier | |||
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HSC106D/M
Sensitive Gate Silicon Controlled Rectifier
FEATURES
 Repetitive Peak Off-State Voltage (VRM= 400V/600V)
 R.M.S On-state Current (IT(RMS)=4.0A)
 Average On-state Current (IT(AV)=2.55A)
 Sensitive Gate Triggering (0.2mAMax@25â)
General Description
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light and speed control ; process
and remote control, and warning systems where reliability of
operation is important.
Absolute Maximum Ratings (TJ=25â)
Symbol
Parameter
VDRM
Repetitive Peak Off-State Voltage (Forward) HSC106D
HSC106M
VRRM
Repetitive Peak Off-State Voltage (Reverse) HSC106D
HSC106M
IT(RMS)
IT(AV)
ITSM
I2t
On-State R.M.S Current
(180Ë Condition Angles, TC=80â)
On-State Average Current
(180Ë Condition Angles, TC=80â)
Surge On-State Current
(1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 °C)
Circuit Fusing Considerations (t=8.3mS)
PGM
Forward Peak Gate Power Dissipation
(Pulse Width â¤1.0μsec,Tc=80â)
PG(AV)
Forward Average Gate Power Dissipation
(Pulse Width â¤1.0μsec, Tc=80â)
VGRM
IFGM
Reverse Peak Gate Voltage
Forward Peak Gate Current
(Pulse Width â¤1.0 μsec, Tc=80â)
TSTG Storage Temperature Range
Tj
Operating Junction Temperature
VDRM =
400V / 600V
IT(RMS) = 4.0A
Symbol
2.Anode
1.Cathode
3.Gate
TO-126
1
2
3
1. K
2. A
3. G
HSC106D/M
Value
400
600
400
600
4.0
2.55
20
1.65
0.5
0.1
6.0
0.2
-40 to +150
-40 to +110
Units
V
V
A
A
A
A2s
W
W
V
A
â
â
â SEMIHOW REV.A2 JUN 2007
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