HSB100-8_12 Datasheet, PDF (1/4 Pages) SemiHow Co.,Ltd. – Silicon Controlled Rectifier

HSB100-8
Silicon Controlled Rectifier
V_DRM = 600 V
I_T(RMS) = 0.8A
FEATURES
 Repetitive Peak Off-State Voltage: 600V
 R.M.S On-state Current (I_T(RMS)=0.8A)
 Average On-state Current (I_T(AV)=0.5A)
 Low On-State Voltage (1.2V_Typ@I_TM)
General Description
PNPN Devices designed for high volume, line-powered consumer
applications such as relay and lamp driver, small motor controls, gate
drivers for larger thyristors and sensing and detection circuits. Supplied
in and inexpensive plastic TO-92 package which is readily adaptable for
use in automatic insertion equipment.
Symbol
3.Anode
1.Cathode
2.Gate
1. K
2. G
3. A
3
2
1
HSB100-8
Absolute Maximum Ratings ^{(Ta=25℃)}
Symbol
V_DRM
I_T(RMS)
I_T(AV)
I_TSM
I²t
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current (All conduction angles)
Average On-State Current
(Half Sine Wave : T_C=74℃)
Surge On-State Current
(1/2 Cycle, 60Hz, Peak, Non Repetitive)
Circuit Fusing Considerations (t=8.3mS)
P_GM Forward Peak Gate Power Dissipation (Ta=25℃)
P_G(AV)
V_RGM
I_FGM
T_STG
T_j
Forward Average Gate Power Dissipation
(Ta=25℃, t=8.3mS)
Reverse Peak Gate Voltage
Forward Peak Gate Current
Storage Temperature Range
Operating Junction Temperature
Value
600
0.8
0.5
10
0.415
0.1
0.01
5
1
-40 to +125
-40 to +125
Units
V
A
A
A
A²s
W
W
V
A
℃
℃
◎ SEMIHOW REV.1.0 Jan 2007