|
HRW82N10K Datasheet, PDF (1/6 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET | |||
|
HRW82N10K / HRI82N10K
100V N-Channel Trench MOSFET
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 110nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 6.5 mΩ (Typ.) @VGS=10V
ï± 100% Avalanche Tested
December 2014
BVDSS = 100 V
RDS(on) typ = 6.5mΩ
ID = 100 A
D2-PAK I2-PAK
HRW82N10K HRI82N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25â)
Power Dissipation (TC = 25â)
- Derate above 25â
100
100
70
350
±25
560
22
3.75
167
1.11
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.9
40
62.5
Units
â/W
â SEMIHOW REV.A0,December 2014
|
▷ |