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HRW370N10K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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HRW370N10K
100V N-Channel Trench MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 50 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 30 PÈ (Typ.) @VGS=10V
 100% Avalanche Tested
April 2016
BVDSS = 100 V
RDS(on) typ = 30 PÈ
ID = 25 A
D2-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25à
)
Power Dissipation (TC = 25à
)
- Derate above 25à
100
25
17.5
88
Ï20
80
6
3.75
60
0.4
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
RÈJA
Parameter
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.9
40
62.5
Units
à
/W
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