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HRU13N10K Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET | |||
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HRD13N10K / HRU13N10K
100V N-Channel Trench MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 20 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 85 PÈ (Typ.) @VGS=10V
 Lower RDS(ON) : 135 PÈ (Typ.) @VGS=4.5V
 Built-in ESD Diode
 100% Avalanche Tested
Dec 2013
BVDSS = 100 V
RDS(on) typ = 85 PÈ
ID = 3.5 A
D-PAK I-PAK
2
1
3
HRD13N10K
1
2
3
HRU13N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 70à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Power Dissipation (TA = 25à
)*
Power Dissipation (TC = 25à
)
- Derate above 25à
100
3.5
2.8
14.0
Ï20
40
3.5
2.5
37
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
RÈJA
Junction-to-Case
Junction-to-Ambient*
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
3.4
50
110
Units
V
A
A
A
V
mJ
A
W
W
W/à
à
à
Units
à
/W
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