HRS105N15H Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Enhanced Avalanche Ruggedness

Jan 2016
HRS105N15H
150V N-Channel Trench MOSFET
Features
‰ High Speed Power Switching, Logic Level
‰ Enhanced Body diode dv/dt capability
‰ Enhanced Avalanche Ruggedness
‰ 100% UIS Tested, 100% Rg Tested
‰ Lead free, Halogen Free
Application
‰ Synchronous Rectification in SMPS
‰ Hard Switching and High Speed Circuit
‰ Power Tools
‰ UPS & Motor Control
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), typ}
Value
150
120
8.8
Unit
V
A
Pȍ
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings T_J=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
T_C = 25୅
T_C = 100୅
I_DM
Pulsed Drain Current
E_AS
Single Pulsed Avalanche Energy
L=0.4mH
P_D
Power Dissipation
T_C = 25୅
T_J, T_STG
Operating and Storage Temperature Range
* Drain current limited by maximum junction temperature
150
ρ20
120 *
85 *
400 *
845
40
-55 to +175
Units
V
V
A
A
A
mJ
W
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.7
62.5
Units
୅/W
୅/W
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