HRLO85N10H Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Enhanced Avalanche Ruggedness

Fab 2016
HRLO85N10H
100V N-Channel Trench MOSFET
Features
 High Speed Power Switching, Logic Level
 Enhanced Body diode dv/dt capability
 Enhanced Avalanche Ruggedness
 100% UIS Tested, 100% Rg Tested
 Lead free, Halogen Free
Application
 Synchronous Rectification in SMPS
 Hard Switching and High Speed Circuit
 DC/DC in Telecoms and Inductrial
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), typ @10V}
R_{DS(on), typ @4.5V}
Value
100
14
7.1
8.4
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings T_J=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T_A = 25℃
T_A = 100℃
Single Pulsed Avalanche Energy
L=0.1mH
Power Dissipation
T_A = 25℃
T_A = 70℃
Operating and Storage Temperature Range
100
±20
14.0
8.9
80
80
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJL
Junction-to-Lead
Junction-to-Ambient (t≤10s)
R_θJA
Junction-to-Ambient (steady state)
Typ.
--
--
--
Max.
23
40
75
Units
℃/W
℃/W
℃/W
◎ SEMIHOW REV.A0,Fab 2016