HRF140N06K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 100PerCent Avalanche Tested

HRF140N06K
60V N-Channel Trench MOSFET
FEATURES
 BV_DSS = 60 V
 I_D = 40 A
 Unrivalled Gate Charge : 40 nC (Typ.)
 Lower R_DS(ON) : 11.5 mΩ (Typ.) @V_GS=10V
 100% Avalanche Tested
December 2014
8DFN 5x6
1
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_C = 25℃)
Power Dissipation (T_A = 25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
60
40 *
28 *
140 *
±20
145
3.3
33
2.4
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJA
R_θJC
Junction-to-Ambient
Junction-to-Case
Typ.
--
--
Max.
62
4.5
Units
℃/W
◎ SEMIHOW REV.A0,December 2014