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HRF120N10K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 100PerCent Avalanche Tested | |||
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HRF120N10K
100V N-Channel Trench MOSFET
FEATURES
ï± BVDSS = 100 V
ï± ID = 73 A
ï± Unrivalled Gate Charge : 65 nC (Typ.)
ï± Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V
ï± 100% Avalanche Tested
December 2014
8DFN 5x6
1
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25â)
Power Dissipation (TA = 25â)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
100
73 *
51 *
200 *
±25
265
8.8
88
2.4
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
â
â
Thermal Resistance Characteristics
Symbol
Parameter
RθJA
RθJC
Junction-to-Ambient
Junction-to-Case
Typ.
--
--
Max.
62
1.7
Units
â/W
â SEMIHOW REV.A0,December 2014
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