HRD80N06K Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

HRD80N06K / HRU80N06K
60V N-Channel Trench MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 90 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 6.3 mΩ (Typ.) @V_GS=10V
 100% Avalanche Tested
December 2014
BV_DSS = 60 V
R_{DS(on) typ} = 6.3mΩ
I_D = 114 A
D-PAK I-PAK
2
1
3
HRD80N06K
1
2
3
HRU80N06K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_A = 25℃)*
Power Dissipation (T_C = 25℃)
- Derate above 25℃
60
114 *
80 *
400 *
±25
340
16
3
160
1.07
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient*
R_θJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.9
50
110
Units
℃/W
◎ SEMIHOW REV.A0,December 2014