|
HRD180N10K Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
|
HRD180N10K / HRU180N10K
100V N-Channel Trench MOSFET
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 85 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V
ï± 100% Avalanche Tested
December 2014
BVDSS = 100 V
RDS(on) typ =15 mΩ
ID = 65 A
D-PAK I-PAK
2
1
3
HRD180N10K
1
2
3
HRU180N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25â)
â Continuous (TC = 100â)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25â)*
Power Dissipation (TC = 25â)
- Derate above 25â
100
65 *
46 *
180 *
±25
170
13.3
3
133
0.89
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.1
50
110
Units
â/W
â SEMIHOW REV.A0,December 2014
|
▷ |