HIL40N120VF Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 1200V Field Stop Trench IGBT

HIL40N120VF
1200V Field Stop Trench IGBT
Employing Field Stop technology, CO-PAK, IGBT with FRD.
1200V/40A planar gate IGBTs provide low Conduction,
switching losses and very good ruggedness.
Applications
Induction Heating, UPS, welding converters
and general purpose inverters.
Jan 2014
V_CES = 1200 V
I_C = 40 A
V_{CE(sat) typ} = 2.0 V
TO-264
GCE
Absolute Maximum Ratings
Symbol
V_CES
I_C
I_CM
V_GES
t_SC
P_D
T_J, T_STG
T_L
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
Collector Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Emitter Voltage
Short circuit withstand time
(V_GE=15V, V_CC=600V, T_C=125୅)
Power Dissipation (T_C = 25୅)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Value
1200
64
40
160
ρ20
10
500
-55 to +150
300
Units
V
A
A
A
V
Ꮃ
W
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC(IGBT)
R_șJC(Diode)
R_șJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
--
Max.
0.25
0.7
25
Units
୅/W
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