HIH30N120TF Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 1200V Field Stop Trench IGBT

HIH30N120TF
1200V Field Stop Trench IGBT
FEATURES
‰ 1200V Field Stop Trench Technology
‰ High Speed Switching
‰ Low Conduction Loss
‰ Positive Temperature Coefficient
‰ Easy Parallel Operation
Dec 2013
V_CES = 1200 V
I_C = 30 A
V_{CE(sat) typ} = 2.0 V
TO-3P
G
C
E
Absolute Maximum Ratings
Symbol
V_CES
I_C
I_CM
I_F
I_FM
V_GES
P_D
T_J
T_STG
T_L
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
Collector Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Diode Forward Current – Continuous (T_C = 25୅)
Diode Forward Current – Continuous (T_C = 100୅)
Diode Current
– Pulsed
(Note 1)
Gate-Emitter Voltage
Power Dissipation
– Continuous (T_C = 25୅)
Power Dissipation
– Continuous (T_C = 100୅)
Operating Temperature Range
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R_șJC(IGBT)
R_șJC(Diode)
R_șJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Value
1200
60
30
90
60
30
90
ρ20
329
132
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.38
2.1
40
Units
V
A
A
A
A
A
A
V
W
୅
୅
୅
Units
୅/W
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