HIA30N60BP Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V PT IGBT

HIA30N60BP
600V PT IGBT
FEATURES
‰ Low V_CE(sat)
‰ Maximum Junction Temperature 150୅
‰ Short Circuit Withstand Time 5Ꭹ
‰ Designed for Operation Between 1-20KHz
‰ Very tight Parameter Distribution
‰ High Ruggedness, Temperature stable behavior
Dec 2013
V_CES = 600 V
I_C = 30 A
V_{CE(sat) typ} = 2.2 V
TO-247
GC _E
Absolute Maximum Ratings
Symbol
V_CES
I_C
I_CM
I_F
I_FM
V_GES
t_SC
P_D
T_J
T_STG
T_L
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
Collector Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Diode Forward Current – Continuous (T_C = 25୅)
Diode Forward Current – Continuous (T_C = 100୅)
Diode Current
– Pulsed
(Note 1)
Gate-Emitter Voltage
Short circuit withstand time
(V_GE=15V, V_CC=400V, T_C=150୅)
Power Dissipation (T_C = 25୅)
Operating Temperature Range
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R_șJC(IGBT)
R_șJC(Diode)
R_șJA
Junction-to-Case
Junction-to-Case
Parameter
Junction-to-Ambient
Value
600
60
30
90
60
30
90
ρ20
5
208
-40 to +150
-55 to +150
260
Units
V
A
A
A
A
A
A
V
Ꮃ
W
୅
୅
୅
Typ.
--
--
--
Max.
0.6
0.9
40
Units
୅/W
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