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HIA20N60BP Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V PT IGBT | |||
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HIA20N60BP
600V PT IGBT
FEATURES
 Low VCE(sat)
 Maximum Junction Temperature 150à
 Short Circuit Withstand Time 5á©
 Designed for Operation Between 1-20KHz
 Very tight Parameter Distribution
 High Ruggedness, Temperature stable behavior
Dec 2013
VCES = 600 V
IC = 20 A
VCE(sat) typ = 2.2 V
TO-247
GC E
Absolute Maximum Ratings
Symbol
VCES
IC
ICM
IF
IFM
VGES
tSC
PD
TJ
TSTG
TL
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
Collector Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Diode Forward Current â Continuous (TC = 25à
)
Diode Forward Current â Continuous (TC = 100à
)
Diode Current
â Pulsed
(Note 1)
Gate-Emitter Voltage
Short circuit withstand time
(VGE=15V, VCC=400V, TC=150à
)
Power Dissipation (TC = 25à
)
Operating Temperature Range
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
Notes.
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC(IGBT)
RÈJC(Diode)
RÈJA
Junction-to-Case
Junction-to-Case
Parameter
Junction-to-Ambient
Value
600
40
20
60
40
20
60
Ï20
5
192
-40 to +150
-55 to +150
260
Units
V
A
A
A
A
A
A
V
á³
W
à
à
à
Typ.
--
--
--
Max.
0.65
0.97
40
Units
à
/W
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