HGA40N120FV Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 1200V Field Stop Trench Technology

HGA40N120FV
1200V Field Stop Trench IGBT
FEATURES
 1200V Field Stop Trench Technology
 Low Saturation Voltage
 High Switching Frequency
 Very Soft, Fast Recovery Anti-parallel diode
APPLICATION
 Welding Converters
 Uninterruptible Power Supply
 General Purpose Inverters
March 2015
V_CES = 1200 V
I_C = 40 A
V_{CE(sat) typ} = 2.0 V
TO-247
GC _E
Absolute Maximum Ratings
Symbol
V_CES
I_C
I_CM
I_F
I_FM
V_GES
P_D
T_J, T_STG
T_L
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
Collector Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Diode Forward Current – Continuous (T_C = 100℃)
Diode Maximum Forward Current
Gate-Emitter Voltage
Power Dissipation
– Continuous (T_C = 25℃)
Power Dissipation
– Continuous (T_C = 100℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes:
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Value
1200
64
40
160
20
60
±20
400
160
-55 to +150
300
Typ.
--
--
--
Max.
0.31
1.11
40
Units
V
A
A
A
A
A
V
W
W
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,May 2014