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HFW8N60U Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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HFW8N60U / HFI8N60U
600V N-Channel MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 22.0 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
Oct 2015
BVDSS = 600 V
RDS(on) typ È
ID = 7.5 A
D2-PAK I2-PAK
HFW8N60U HFI8N60U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
7.5
4.7
30
Ï30
280
7.5
15.0
4.5
Power Dissipation (TA = 25à
) *
3.13
PD
Power Dissipation (TC = 25à
)
150
- Derate above 25à
1.2
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
Junction-to-Case
RÈJA
Junction-to-Ambient*
RÈJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.82
40
62.5
Units
à
/W
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