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HFW840 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 500V N-Channel MOSFET
April 2016
HFW840
500V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 25 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 500 V
RDS(on) typ ȍ
ID = 9.0 A
D2-PAK
2
1
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25୅ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25୅)
– Continuous (TC = 100୅)
– Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.4
36
ρ30
360
9.0
13.5
4.5
Power Dissipation (TA = 25୅) *
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
3.13
135
1.07
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA
Junction-to-Ambient *
RșJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.93
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/୅
୅
୅
Units
୅/W
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