HFW6N90 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

March 2013
HFW6N90 / HFI6N90
900V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 1.95 ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
BV_DSS = 900 V
R_{DS(on) typ} = 1.95 ȍ
I_D = 6.0 A
D²-PAK I²-PAK
HFW6N90
HFI6N90
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
900
I_D
Drain Current
– Continuous (T_C = 25ఁ͚͑
6.0
Drain Current
– Continuous (T_C = 100ఁ͚͑
3.8
I_DM
Drain Current
– Pulsed
(Note 1)
24
V_GS
Gate-Source Voltage
ρ30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
650
I_AR
Avalanche Current
(Note 1)
6.0
E_AR
Repetitive Avalanche Energy
(Note 1)
16.7
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_A = 25ଇ) *
Power Dissipation (T_C = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
167
1.33
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
R_șJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.75
40
62.5
Units
ఁ͠Έ͑
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