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HFW12N60S_16 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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July 2016
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ È
ID = 12 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 38 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
D2-PAK
D
G
S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
12
7.4
48
Ï30
870
12
22.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25à
) *
Power Dissipation (TC = 25à
)
- Derate above 25à
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
3.13
225
1.78
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/à
à
à
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
RÈJA
Parameter
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.56
40
62.5
Units
à
/W
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