|
HFW11N40 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 400V N-Channel MOSFET | |||
|
Dec 2005
HFW11N40
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ = 0.38 Ω
ID = 11.4 A
FEATURES
ï± Originative New Design
ï± Superior Avalanche Rugged Technology
ï± Robust Gate Oxide Technology
ï± Very Low Intrinsic Capacitances
ï± Excellent Switching Characteristics
ï± Unrivalled Gate Charge : 35 nC (Typ.)
ï± Extended Safe Operating Area
ï± Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V
ï± 100% Avalanche Tested
D2-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source Voltage
400
ID
Drain Current
â Continuous (TC = 25â)
11.4
Drain Current
â Continuous (TC = 100â)
7.2
IDM
Drain Current
â Pulsed
(Note 1)
45.6
VGS
Gate-Source Voltage
±30
EAS
Single Pulsed Avalanche Energy
(Note 2)
520
IAR
Avalanche Current
(Note 1)
11.4
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25â) *
Power Dissipation (TC = 25â)
- Derate above 25â
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
3.13
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/â
â
â
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.85
40
62.5
Units
â/W
â SEMIHOW REV.A0,Dec 2005
|
▷ |