HFU630A_16 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 200V N-Channel MOSFET

Oct 2016
HFU630A / HFD630A
200V N-Channel MOSFET
Features
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
200
9.0
0.34
12
Unit
V
A
ȍ
nC
HFU630A
TO-251
HFD630A
TO-252
D
Symbol
S
D
G
S
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
V_DSS
I_D
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
I_DM
Drain Current
– Pulsed
(Note 1)
V_GS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_A = 25୅)*
P_D
Power Dissipation (T_C = 25୅)
- Derate above 25୅
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Value
300
9.0 *
5.7 *
36 *
ρ30
232
9
4.5
2.5
45
0.36
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
W
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
R_șJA
Parameter
Junction-to-Case, Max.
Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Junction-to-Ambient (* 1 in² pad of 2 oz copper), Max.
Value
2.77
110
50
Unit
୅/W
୅/W
୅/W
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