HFU4N65F Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Nov 2016
HFU4N65F / HFD4N65F
650V N-Channel MOSFET
Features
‰ Originative New Design
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
650
4
3
8.5
Unit
V
A
ȍ
nC
HFU4N65F
TO-251
HFD4N65F
TO-252
Symbol
D
S
D
G
S
G
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25୅)*
P_D
Power Dissipation (T_C = 25୅)
- Derate above 25୅
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
R_șJA
Parameter
Junction-to-Case, Max.
Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Junction-to-Ambient (* 1 in² pad of 2 oz copper), Max.
Value
650
4.0 *
2.5 *
16 *
ρ30
70
4.0
6.2
4.5
2.5
62.5
0.5
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/୅
୅
୅
Value
2.0
110
50
Unit
୅/W
୅/W
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͧ͑͢͡