HFU3N90 Datasheet, PDF (1/9 Pages) SemiHow Co.,Ltd. – 900V N-Channel MOSFET

April 2017
HFU3N90 / HFD3N90
900V N-Channel MOSFET
Features
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 100% Avalanche Tested
 RoHS Compliant
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), Typ}
Qg_{, Typ}
Value
900
3
5
17
Unit
V
A
Ω
nC
HFU3N90
TO-251
HFD3N90
TO-252
D
Symbol
S
D
G
Absolute Maximum Ratings
S
G
T_C=25℃ unless otherwise specified
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Value
900
3.0
1.9
12
± 30
180
3.0
10.7
4.5
2.5
70
0.56
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
RθJS
RθJA
Parameter
Junction-to-Case, Max.
Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Junction-to-Ambient (* 1 in² pad of 2 oz copper), Max.
Value
1.78
110
50
Unit
℃/W
℃/W
℃/W
◎ SEMIHOW REV.A0,April 2017