HFT1N60S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Dec 2009
HFT1N60S
600V N-Channel MOSFET
BV_DSS = 600 V
R_{DS(on) typ} ȍ
I_D = 0.2 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
SOT-223
2
3
1
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25ଇ)
– Continuous (T_C = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.2
0.12
0.8
ρ30
33
0.2
0.2
4.5
P_D
T_J, T_STG
T_L
Power Dissipation (T_C = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.1
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJA
Parameter
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
Max.
60
Units
୅/W
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡