HFT1N60F Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

May 2015
HFT1N60F
600V N-Channel MOSFET
BV_DSS = 600 V
R_{DS(on) typ} ȍ
I_D = 1 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.7 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
SOT-223
2
3
1
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_C = 25୅)
- Derate above 25୅
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Value
600
1*
0.6 *
4*
ρ30
33
1
0.2
2.1
0.02
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJA
Parameter
Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
Max.
60
Units
୅/W
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