|
HFS9N50 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
|
Mar 2008
HFS9N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ È
ID = 9.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 35 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à°Í
â Continuous (TC = 100à°Í
â Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0*
5.7*
36*
Ïͤ͡
360
9.0
14.7
4.5
PD
Power Dissipation (TC = 25à°Í
Í ÍµÎΣÎÎ¥ÎÍÎÎΠΧÎÍͣͦà°
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
* Drain current limited by maximum junction temperature
50
0.4
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/à°
à°
à°
Units
à°Í Î
à° ÎͶ;ͺ͹ÎÎÍÎͶÎÍͲ͢Í;ÎΣÍͣͩ͡͡
|
▷ |