HFS4N65 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

April 2006
HFS4N65
650V N-Channel MOSFET
BV_DSS = 650 V
R_{DS(on) typ} = 2.3 Ω
I_D = 3.6* A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 15 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 2.3 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
TO-220F
12 ₃
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
3.6*
2.3*
14.4*
±30
240
3.6
10
5.5
P_D
Power Dissipation (T_C = 25℃)
- Derate above 25℃
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
33
0.26
-55 to +150
300
Thermal Resistance Characteristics
Symbol
R_θJC
R_θJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.79
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,April 2006