HFS3N80 Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – 800V N-Channel MOSFET

Dec 2005
HFS3N80
800V N-Channel MOSFET
BV_DSS = 800 V
R_{DS(on) typ} = 4.0 Ω
I_D = 3.0 A
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 17 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 4.0 Ω (Typ.) @V_GS=10V
 100% Avalanche Tested
TO-220F
1 ₂₁
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
800
I_D
Drain Current
– Continuous (T_C = 25℃)
3.0*
Drain Current
– Continuous (T_C = 100℃)
1.9*
I_DM
Drain Current
– Pulsed
(Note 1)
12*
V_GS
Gate-Source Voltage
±30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
320
I_AR
Avalanche Current
(Note 1)
3.0
E_AR
Repetitive Avalanche Energy
(Note 1)
10.7
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
P_D
Power Dissipation (T_C = 25℃)
- Derate above 25℃
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
39
0.31
-55 to +150
300
Thermal Resistance Characteristics
Symbol
R_θJC
R_θJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.2
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,Dec 2005